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: Impact of geometrical, physical, and field-scaling on transistor behavior.
: State-of-the-art tools and techniques, including EUV (Extreme Ultraviolet) and multi-patterning.
: Evolution from legacy 5-mask processes to modern FinFET , Nanosheet , and Gate-All-Around (GAA) architectures.
: Analysis of leakage current mechanisms, subthreshold behavior, and temperature dependency. 2. Manufacturing & Technology
: Impact of geometrical, physical, and field-scaling on transistor behavior.
: State-of-the-art tools and techniques, including EUV (Extreme Ultraviolet) and multi-patterning.
: Evolution from legacy 5-mask processes to modern FinFET , Nanosheet , and Gate-All-Around (GAA) architectures.
: Analysis of leakage current mechanisms, subthreshold behavior, and temperature dependency. 2. Manufacturing & Technology
